Epitaxial cobalt silicide formation using a Co/TiSixbilayer on (100)Si
نویسندگان
چکیده
منابع مشابه
A new metastable epitaxial silicide: FeSi2/Si(111)
A metastable phase of FeSi 2 that is not present in the bulk phase diagram can be grown epitaxially on Si(111). Scanning tunneling microscope images reveal the surface reconstruction of this phase and allows one to model its crystallographic structure. It crystallizes with a cubic structure, probably a fluorite structure like CoSi 2 and NiSi2, lattice-matched to Si. The (111) surface has a 2 × ...
متن کاملSimulation of a cobalt silicide/Si hetero-nanocrystal memory
A nanocrystal memory using CoSi2/Si hetero-nanocrystals as floating gate was proposed. Numerical investigations on the writing, erasing and retention were performed. The hetero-structure provides an extra quantum well for the charge to achieve much longer retention time while maintains a writing/erasing speed similar to that of Si nanocrystal memory. 2005 Elsevier Ltd. All rights reserved. PACS...
متن کاملEvidence of electronic growth in titanium- and cobalt-silicide islands
A possibility of growing highly mismatched and yet two-dimensional heteroepitaxial deposits, is both fascinating in terms of basic science and technologically important. So far, stabilization of flat morphology by a reduction of the overall electron energy in a quantum well (hence termed ‘‘electronic growth’’), has been observed exclusively in heteroepitaxy of simple metals, lead, and silver. T...
متن کاملIndex Terms: Optimization of 45nm nMOS, Cobalt Silicide, Taguchi Method
The optimization of 45nm NMOS device was studied using Taguchi Method. This method was used to analyze the experimental data in order to get the optimum results. In this paper, there are four factors were varied for 3 levels to perform 9 experiments. Silicide on the poly-Si gate electrode was used to reduce the gate electrode resistance. The virtually fabrication of 45nm NMOS device was perform...
متن کاملCo silicide formation on SiGeC/Si and SiGe/Si layers
The reaction of Co with epitaxial SiGeC/Si layers is investigated and compared to the reaction of Co with SiGe/Si layers. The sequence of phase formation is the same as the reaction of Co with monocrystalline Si, however, cobalt disilicide is formed at much higher temperatures. The presence of C further delays the disilicide formation, as a result of C accumulation at the silicide/substrate int...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Crystallographica Section A Foundations of Crystallography
سال: 2002
ISSN: 0108-7673
DOI: 10.1107/s0108767302099294